Multiplication onset and electric field properties of proton irradiated LGADs-Reference-Cited by-同舟云学术

Multiplication onset and electric field properties of proton irradiated LGADs

Published:2018-11-03 Issue: Volume: Page:
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Container-title:Proceedings of The 26th International Workshop on Vertex Detectors — PoS(Vertex 2017)
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Author:

Otero Ugobono Sofia,Centis Vignali Matteo,Fernandez Garcia Marcos,Gallrapp Christian,Hidalgo Villena Salvador,Mateu Isidre,Moll Michael,Pellegrini Giulio,Ventura Barroso Ana,Vila Ivan

Publisher

Sissa Medialab

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Timing performance and gain degradation after irradiation with protons and neutrons of Low Gain Avalanche Diodes based on a shallow and broad multiplication layer in a float-zone 35μm and 50μm thick silicon substrate;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-10

2. Leakage current simulations of Low Gain Avalanche Diode with improved Radiation Damage Modeling;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2022-10

3. Characterisation of irradiated and non-irradiated silicon sensors with a table-top two photon absorption TCT system;Journal of Instrumentation;2022-08-01

4. Charge and temporal characterisation of silicon sensors using a two-photon absorption laser;Journal of Instrumentation;2022-02-01

5. Radiation effects on NDL prototype LGAD sensors after proton irradiation;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2021-09