Author:
Geertsema R.,Akiba K.,van Beuzekom M.,Bischoff T.,Heijhoff K.,Snoek H.
Abstract
Abstract
First measurements are presented from a newly commissioned
two-photon absorption (TPA) setup at Nikhef. The characterisation of
the various components of the system is discussed. Two planar
silicon sensors, one being electron collecting and one hole
collecting, are characterised with detailed measurements of the
charge collection and time resolution. The TPA spot is determined to
have a radius of 0.975(11) μm and length of 23 μm in
silicon. The trigger time resolution of the system is shown to be
maximally 30.4 ps. For both sensors, uniform charge collection is
observed over the pixels, and the pixel side metallisation is imaged
directly using the TPA technique. The best time resolution for a
single pixel is found to be 600 ps and 560 ps for the electron and
hole collecting sensors respectively, and is dominated by ASIC
contributions. Further scans at different depths in the sensor and
positions within the pixels have been performed and show a uniform
response. It is concluded that the TPA setup is a powerful tool to
investigate the charge collection and temporal properties of silicon
sensors.
Subject
Mathematical Physics,Instrumentation
Cited by
2 articles.
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