Experimental Study on Damage Effect of Mid-Infrared Pulsed Laser on Charge Coupled Device (CCD) and HgCgTe Detectors

Abstract

As the weak link in electro-optical imaging systems, photodetectors have always faced the threat of laser damage. In this paper, we experimentally investigated the damage mechanism of the photodetector induced by the out-of-band laser. The damage thresholds of the mid-infrared pulsed laser for Charge Coupled Device (CCD) and HgCdTe detectors were determined through damage experiments. The analysis of the damage phenomena and data for both CCD and HgCdTe detectors clearly demonstrated that out-of-band mid-infrared pulsed lasers could entirely incapacitate CCD and HgCdTe detectors. Our analysis of the damage process and data revealed that the primary mechanism of damage to CCD and HgCdTe detectors by mid-infrared pulsed lasers was primarily thermal. This study serves as a reference for further research on the mid-infrared pulsed laser damage mechanisms of CCD and HgCdTe detectors, as well as for laser protection and performance optimization in imaging systems.