High-sensitive and fast response to 255 nm deep-UV light of CH 3 NH 3 PbX 3 (X = Cl, Br, I) bulk crystals

Author:

Zhang Zhaojun12,Zheng Wei12,Lin Richeng32,Huang Feng12ORCID

Affiliation:

1. School of Materials, Sun Yat-Sen University, Xingang Xi Road No. 135, Guangzhou 510275, People's Republic of China

2. State Key laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Xingang Xi Road No. 135, Guangzhou 510275, People's Republic of China

3. School of Physics, Sun Yat-Sen University, Xingang Xi Road No. 135, Guangzhou 510275, People's Republic of China

Abstract

Deep-UV light detection has important application in surveillance and homeland security regions. CH 3 NH 3 PbX 3 (X = Cl, Br, I) materials have outstanding optical absorption and electronic transport properties suitable for obtaining excellent deep-UV photoresponse. In this work, we have grown high-quality CH 3 NH 3 PbX 3 (X = Cl, Br, I) bulk crystals and used them to fabricate photodetectors. We found that they all have high-sensitive and fast-speed response to 255 nm deep-UV light. Their responsivities are 10–10 3 times higher than MgZnO and Ga 2 O 3 detectors, and their response speeds are 10 3 times faster than Ga 2 O 3 and ZnO detectors. These results indicate a new promising route for deep-UV detection.

Funder

National Natural Science Foundation of China

Science and Technology Program of Guangzhou, China

Publisher

The Royal Society

Subject

Multidisciplinary

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