High-Performance Memory Device Using Graphene Oxide Flakes Sandwiched Polymethylmethacrylate Layers-Reference-Cited by-同舟云学术

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High-Performance Memory Device Using Graphene Oxide Flakes Sandwiched Polymethylmethacrylate Layers

Published:2013-10-01 Issue:10 Volume:13 Page:6755-6759
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j. nanosci. nanotech.

Author:

Valanarasu S.,Kulandaisamy I.,Kathalingam A.,Rhee Jin-Koo,Vijayan T. A.,Chandramohan R.

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Amino Acid-Modified Wrinkled Graphene Oxide Nanofiber Embedded in PMMA for Long-Term Archival Memory Applications;ACS Applied Electronic Materials;2024-04-16

2. MoS₂-functionalized conductive carbon heterostructure embedded with ferroelectric polymers for bipolar memristive applications;Semiconductor Science and Technology;2023-05-05

3. Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing;Discover Nano;2023-03-09

4. Ultralow-Power RRAM with a High Switching Ratio Based on the Large van der Waals Interstice Radius of TMDs;ACS Nano;2022-12-05

5. Standards for the Characterization of Endurance in Resistive Switching Devices;ACS Nano;2021-11-03

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