InGaN-Based Nano-Pillar Light Emitting Diodes Fabricated by Self-Assembled ITO Nano-Dots-Reference-Cited by-同舟云学术

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InGaN-Based Nano-Pillar Light Emitting Diodes Fabricated by Self-Assembled ITO Nano-Dots

Published:2012-05-01 Issue:5 Volume:12 Page:4265-4268
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j. nanosci. nanotech.

Author:

Park Min Joo,Kwak Joon Seop

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nonpolar GaN-based nanopillar green light-emitting diode (LED) fabricated by using self-aligned In3Sn nanodots;Applied Surface Science;2021-01

2. Vertical-Injection AlGaInP LEDs with n-AlGaInP Nanopillars Fabricated by Self-Assembled ITO-Based Nanodots;Nanoscale Research Letters;2015-09-15

3. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes;Journal of Applied Physics;2014-07-07

4. Enhanced color-conversion efficiency between colloidal quantum dot-phosphors and nitride LEDs by using nano-patterned p-GaN;Journal of Electroceramics;2014-02-20

5. Enhanced Light Extraction from GaN-Based Vertical Light-Emitting Diodes with a Nano-Roughened N-GaN Surface Using Dual-Etch;Journal of Nanoscience and Nanotechnology;2013-12-01

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