A Novel Fabrication Method for the Nanoscale Tunneling Field Effect Transistor-Reference-Cited by-同舟云学术

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A Novel Fabrication Method for the Nanoscale Tunneling Field Effect Transistor

Published:2012-07-01 Issue:7 Volume:12 Page:5592-5597
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Kim Hyun Woo,Kim Jang Hyun,Kim Sang Wan,Sun Min-Chul,Kim Garam,Park Euyhwan,Kim Hyungjin,Kim Kyung-Wan,Park Byung-Gook

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deep Insight into DC/RF and Linearity Parameters of a Novel Back Gated Ferroelectric TFET on SELBOX Substrate for Ultra Low Power Applications;Silicon;2020-09-10

2. Investigation of DC, RF and linearity performances of a back-gated (BG) heterojunction (HJ) TFET-on-selbox-substrate (STFET): Introduction to a BG-HJ-STEFT based CMOS inverter;Microelectronics Journal;2020-08

3. Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor;Micromachines;2019-11-03

4. L-shaped tunnel FET with stacked gates to suppress the corner effect;Japanese Journal of Applied Physics;2019-05-21

5. Analysis on RF Parameters of Nanoscale Tunneling Field-Effect Transistor Based on InAs/InGaAs/InP Heterojunctions;Journal of Nanoscience and Nanotechnology;2013-12-01

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