Deep Insight into DC/RF and Linearity Parameters of a Novel Back Gated Ferroelectric TFET on SELBOX Substrate for Ultra Low Power Applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00672-2.pdf
Reference28 articles.
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4. Choi WY, Park B, Lee JD, Liu TK (2007) Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec. IEEE Electron Device Lett 28(8):743–745. https://doi.org/10.1109/LED.2007.901273
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