Strain Engineering of Nanoscale Si P-Type Metal-Oxide-Semiconductor Field-Effect Transistor Devices with SiGe Alloy Integrated with Contact-Etch-Stop Layer Stressors-Reference-Cited by-同舟云学术

Strain Engineering of Nanoscale Si P-Type Metal-Oxide-Semiconductor Field-Effect Transistor Devices with SiGe Alloy Integrated with Contact-Etch-Stop Layer Stressors

Published:2012-07-01 Issue:7 Volume:12 Page:5402-5406
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Lee Chang-Chun

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Magnifying the effective intrinsic stress of surface coating on the performance of nano-scaled Ge-based high-k/metal gate device through superficial layout designs;Thin Solid Films;2018-08

2. The Impacts of Contact Etch Stop Layer Thickness and Gate Height on Channel Stress in Strained N-Metal Oxide Semiconductor Field Effect Transistors;Journal of Nanoscience and Nanotechnology;2015-04-01

3. Structural Optimizations of Silicon Based NMOSFETs with a Sunken STI Pattern by Using a Robust Stress Simulation Methodology;Journal of Nanoscience and Nanotechnology;2015-03-01

4. A Resultant Stress Effect of Contact Etching Stop Layer and Geometrical Designs of Poly Gate on Nanoscaled nMOSFETs with a Si_1−xGe_x Channel;Journal of Nanoscience and Nanotechnology;2015-03-01

5. Effects of extended poly gate on the performance of strained P-type metal-oxide-semiconductor field-effect transistors with a narrow channel width;Thin Solid Films;2014-04