C–V–f, G–V–f and Z″–Z′ Characteristics of n-Type Si/B-Doped p-Type Ultrananocrystalline Diamond Heterojunctions Formed via Pulsed Laser Deposition-Reference-Cited by-同舟云学术

C–V–f, G–V–f and Z″–Z′ Characteristics of n-Type Si/B-Doped p-Type Ultrananocrystalline Diamond Heterojunctions Formed via Pulsed Laser Deposition

Published:2019-10-01 Issue:10 Volume:19 Page:6812-6820
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Chaleawpong Rawiwan¹,Promros Nathaporn¹,Charoenyuenyao Peerasil¹,Nopparuchikun Adison¹,Hanada Takanori²,Ohmagari Shinya³,Yoshitake Tsuyoshi²

Affiliation:

1. Department of Physics, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, 10520, Thailand

2. Department of Applied Science for Electronics and Materials, Kyushu University, Fukuoka, 816-8580, Japan

3. Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Osaka, 563-8577, Japan

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

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