Comparison of Si Doping Effect on GaN Nanowires and Films Synthesized by Metal-Organic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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Comparison of Si Doping Effect on GaN Nanowires and Films Synthesized by Metal-Organic Chemical Vapor Deposition

Published:2008-10-01 Issue:10 Volume:8 Page:4934-4939
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Maeng Jongsun,Kwon Min-Ki,Kwon Soon-Shin,Jo Gunho,Song Sunghoon,Kim Tae-Wook,Choi Byung Sang,Park Seong-Ju,Lee Takhee

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Etching of the SiGa_xN_y Passivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core–Shell Nanowires by MOVPE;Crystal Growth & Design;2022-08-04

2. A systematic study of Ga- and N-polar GaN nanowire–shell growth by metal organic vapor phase epitaxy;CrystEngComm;2020

3. The origin of yellow band emission and cathodoluminescence of Au-catalyzed wurtzite GaN nanowires;Physica E: Low-dimensional Systems and Nanostructures;2016-06

4. Controlled Transformation and Characteristics of GaN Hollow Nanostructures via Carbon@Ga(OH)CO₃ by Hydrothermal Method;Science of Advanced Materials;2015-08-01

5. Effect of Silicon Doping on GaN Nanorods during Vapor–Liquid–Solid Growth;Japanese Journal of Applied Physics;2013-08-01

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