Effect of Silicon Doping on GaN Nanorods during Vapor–Liquid–Solid Growth
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference15 articles.
1. Nanoheteroepitaxy: The Application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials
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3. Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping
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1. A Study on Strain and Shape of GaN Nanorods with Variation of Si Concentration Grown on Patterned Si(111) Substrates;Journal of Nanoscience and Nanotechnology;2016-11-01
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