A Complete Analytical Model of Surface Potential and Drain Current for an Ultra Short Channel Double Gate Asymmetric Junctionless Transistor
Author:
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A TCAD simulation-based analysis of the asymmetrically designed channel effects on double gate-junctionless field-effect nanowire transistor;2023 4th International Conference on Computing and Communication Systems (I3CS);2023-03-16
2. A TCAD Simulation-Based Study of the Radiation Effects on Ultra-Thin Symmetric Double Gate (SDG) Junctionless Field Effect Nanowire Transistor (JLFENT);Lecture Notes in Electrical Engineering;2022-10-05
3. A Charge-Based Capacitance Model for Tri-Gate FinFET;Lecture Notes in Electrical Engineering;2022-10-05
4. Digital Circuit Performance Evaluation of Parallel Gated Junctionless Field Effect Transistor;Journal of Nanoelectronics and Optoelectronics;2022-03-01
5. Channel Potential Modelling of Surrounded Channel Junction Less Field Effect Transistor;Journal of Nanoelectronics and Optoelectronics;2022-02-01
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