A Charge-Based Capacitance Model for Tri-Gate FinFET
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-19-0588-9_16
Reference24 articles.
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4. Baruah RK, Bora N (2011) Analytic solution for symmetric DG MOSFETs with gate-oxide-thickness asymmetry. J Comput Theor Nanosci 8:2025–2028. https://doi.org/10.1166/jctn.2011.1920
5. Bora N, Baruah RK (2011) Quantum mechanical treatment on modeling of drain current, capacitances and transconductances for thin film undoped symmetric DG MOSFETs. In: IEEE international conference on nanoscience technology societal implications, NSTSI11. pp 1–6. https://doi.org/10.1109/NSTSI.2011.6111994
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