Characterization of <I>n</I>-Type Nanocrystalline Iron Disilicide/Intrinsic Ultrananocrystalline Diamond/Amorphous Carbon Composite/<I>p</I>-Type Silicon Heterojunctions at Low Temperatures-Reference-Cited by-同舟云学术

Characterization of n-Type Nanocrystalline Iron Disilicide/Intrinsic Ultrananocrystalline Diamond/Amorphous Carbon Composite/p-Type Silicon Heterojunctions at Low Temperatures

Published:2016-10-01 Issue:5 Volume:11 Page:579-584
ISSN:1555-130X
Container-title:Journal of Nanoelectronics and Optoelectronics
language:en
Short-container-title:Journal of Nanoelectronics and Optoelectronics

Author:

Promros Nathaporn,Baba Ryuji,Kishimoto Hirokazu,Sittimart Phongsaphak,Hanada Takanori,Hanada Kenji,Zkria Abdelrahman,Shaban Mahmoud,Yoshitake Tsuyoshi

Publisher

American Scientific Publishers

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Diode parameters and ultraviolet light detection characteristics of n-type silicon/p-type nanocrystalline diamond heterojunctions at different temperatures;Thin Solid Films;2020-09

2. Light Detection and Carrier Transportation Mechanism in p-Type Si/n-Type Nanocrystalline FeSi2 Heterojunctions Produced via Radio-Frequency Magnetron Sputtering;Journal of Nanoscience and Nanotechnology;2020-08-01

3. Diode Parameters and Equivalent Electrical Circuit Model of n-Type Silicon/B-Doped p-Type Ultrananocrystalline Diamond Heterojunctions Manufactured Through Coaxial Arc Plasma Deposition;Journal of Nanoscience and Nanotechnology;2020-08-01

4. Extraction of J–V, G/ω–V–f and C–V–f Characteristics for p-Type Silicon/Intrinsic Ultrananocrystalline Diamond/n-Type Nanocrystalline Iron Disilicide Heterojunction Photodiodes;Journal of Nanoscience and Nanotechnology;2020-01-01

5. Modeling, design, and simulation of Schottky diodes based on ultrananocrystalline diamond composite films;Semiconductor Science and Technology;2020-01-01