Extraction of J–V, G/ω–V–f and C–V–f Characteristics for p-Type Silicon/Intrinsic Ultrananocrystalline Diamond/n-Type Nanocrystalline Iron Disilicide Heterojunction Photodiodes-Reference-Cited by-同舟云学术

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Extraction of J–V, G/ω–V–f and C–V–f Characteristics for p-Type Silicon/Intrinsic Ultrananocrystalline Diamond/n-Type Nanocrystalline Iron Disilicide Heterojunction Photodiodes

Published:2020-01-01 Issue:1 Volume:20 Page:433-441
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Chaleawpong Rawiwan¹,Promros Nathaporn¹,Charoenyuenyao Peerasil¹,Hanada Kenji²,Chen Li³,Yoshitake Tsuyoshi³

Affiliation:

1. Department of Physics, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Ladkrabang, Bangkok, 10520, Thailand

2. Research Center for Synchrotron Light Applications, Kyushu University, Kasuga, Fukuoka, 816-8580, Japan

3. Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka, 816-8580, Japan

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

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