A Comprehensive Analysis of Short Channel Effects on Carbon Nano Tube Field Effect Transistors

Abstract

As the direction of World health organization (WHO) report the diseases like male infertility, brain tumor, hearing impairment, fetus issues, effect on eyes and other various parts of the human body caused by harmful radiations released by portable electronic devices. To reduce radiation and size, a deep scaling has been applied on MOSFETs. Due to this aggressive scaling MOSFET devices are affected by Short Channel Effects (SCE) in Nanometer regime (<10 nm). The Short Channel Effects Such as Subthreshold Swing (SS), Drain Induced barrier Lowering (DIBL) and threshold voltage roll-off (VT), plays a key role in determining the performance of CMOS devices. At Nano-meter scale Carbon Nano Tube FETs (CNTFETs) devices might be furnished with good control on leakage current and power consumption. The comparative analysis of Subthreshold Swing (SS), Drain Induced Barrier Lowering (DIBL) and Ion/Ioff ratio on Conventional Single Gate MOSFET (C-MOSFET), Double Gate MOSFET (DG-MOSFET) and CNTFET devices are presented in this paper. The results of comparative analysis show that CNTFET exhibits 133% times more Ion/Ioff ratio than MOSFET and very less change in Subthreshold swing and DIBL.