Design of Dual Gate Carbon Nanotube FET and Analysis the Short Channel Effects-Reference-Cited by-同舟云学术

Design of Dual Gate Carbon Nanotube FET and Analysis the Short Channel Effects

Published:2023-10-19 Issue: Volume:14 Page:1-6
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Container-title:2023 First International Conference on Advances in Electrical, Electronics and Computational Intelligence (ICAEECI)
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Author:

P Arul¹,K HelenPrabha¹,N Abirami²,P Vanmathi³

Affiliation:

1. R.M.D. Engineering College,Department of ECE,Chennai,Tamil Nadu,India,601 206

2. R.M.D. Engineering College,Department of IT,Chennai,Tamil Nadu,India,601 206

3. SRM Valliammai Engineering College,Department of Medical Electronics,Chennai,Tamil Nadu,India,603 203

Publisher

IEEE

Link

Reference26 articles.

2. Analysis of short channel effects in multiple-gate (N, 0) carbon nanotube FETs;Dargar;Journal of Engineering Science and Technology,2020

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