Author:
Shailaja J.,Prabhakar V. S. V.
Publisher
Springer Science and Business Media LLC
Reference42 articles.
1. Aichinger, T., Rescher, G., & Pobegen, G. (2018). Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs. Microelectronics Reliability, 80, 68–78.
2. Bendre, V., & Kureshi, A.K. (2016). Performance analysis of operational transconductance amplifier at 180 nm technology. In: 2016 Second International Innovative Applications of Computational Intelligence on Power, Energy and Controls with their Impact on Humanity (CIPECH), IEEE 271–276.
3. Lagos, J., Hershberg, B., Martens, E., Wambacq, P., & Craninckx, J. (2018). A single-channel, 600-MS/s, 12-b, ringamp-based pipelined ADC in 28-nm CMOS. IEEE Journal of Solid-State Circuits, 54(2), 403–416.
4. Song, Y. (2016). Multigate MOSFETs for digital performance and high linearity, and their fabrication techniques. University of Illinois at Urbana-Champaign.
5. Rai, M. K., Gupta, A., & Rai, S. (2022). Comparative analysis & study of various leakage reduction techniques for short channel devices in junctionless transistors: A review and perspective. Silicon, 14(9), 4423–4445.