Simulation Engineering in Quantum Dots for Efficient Photovoltaic Solar Cell Using Copper Iodide as Hole Transport Layer

Abstract

Among the third-generation solar cells, quantum dot solar cell is attracting the researchers and the widespread research has been increasing day by day. It has appropriate electrical and optical properties for a photovoltaic response. Quantum dot has a tunable band gap and its size is less than the Bohr exciton radius. In this work, copper iodide (CuI) is the hole transport layer (HTL), the absorber layer is tetrabutylammonium iodide treated lead sulphide (PbS-TBAI), and titanium dioxide (TiO2) is the electron transport layer (ETL). The device has been rectified to obtain maximum efficiency followed by device optimization. The variation of thickness of the ETL, HTL and absorber layer has been done to optimize the performance of the proposed device. Further, variation of doping density of HTL and interface defect density (IDD) of HTL/PbS-TBAI and PbS-TBAI/ETL has been done to overall optimize the device performance. The interface defect density at both the interfaces (HTL/PbS-TBAI and PbS-TBAI/ETL) has been varied from 1×1010 cm−2 to 1×1017 cm−2 without changing the rest of the device parameters. The result shows notable, diminution in the photo-voltaic performance of the solar cell at higher interface defect density. Quantum efficiency (Q.E) and J-V curve have been investigated. From this study, we have observed that the simulated device structure could be used as an efficient solar cell.