Effect of Channel Thickness and Doping Concentration on Sub-Threshold Performance of Graded Channel and Gate Stack DG MOSFETs-Reference-Cited by-同舟云学术

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Effect of Channel Thickness and Doping Concentration on Sub-Threshold Performance of Graded Channel and Gate Stack DG MOSFETs

Published:2015-09-01 Issue:3 Volume:11 Page:366-372
ISSN:1546-1998
Container-title:Journal of Low Power Electronics
language:en
Short-container-title:Journal of Low Power Electronics

Author:

Swain Sanjit Kumar,Adak Sarosij,Sharma Bikash,Pati Sudhansu Kumar,Sarkar Chandan Kumar

Publisher

American Scientific Publishers

Subject

Electrical and Electronic Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of DC and Analog/RF Performances Analysis of Short Channel Surrounded Gate Junctionless Graded Channel Gate Stack MOSFET;Transactions on Electrical and Electronic Materials;2023-06-13

2. Performance Analysis of DMG-GOS Junctionless FinFET with high-k Spacer;2022 IEEE Silchar Subsection Conference (SILCON);2022-11-04

3. Performance Analysis of Gate Stack DG-MOSFET for Biosensor Applications;Silicon;2022-01-03

4. Comparison Study of DG-MOSFET with and without Gate Stack Configuration for Biosensor Applications;Silicon;2021-05-11

5. Performance Analysis of Gate-Stack Dual-Material DG MOSFET Using Work-Function Modulation Technique for Lower Technology Nodes;Silicon;2021-04-01

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