Electric Field Modulation by Introducing a Hk Dielectric Film of Tens of Nanometers in AlGaN/GaN HEMT
Author:
Publisher
American Scientific Publishers
Subject
General Materials Science
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effects of Drain Field Plate Structure and Passivation Dielectrics on Breakdown Voltage of GaN MISHEMT;2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2023-08-27
2. Novel Stacked Passivation Structure for AlGaN/GaN HEMTs on Silicon With High Johnson’s Figures of Merit;IEEE Journal of the Electron Devices Society;2023
3. Increasing the breakdown voltage in gate – Field plate High Electron Mobility Transistor using a surface field distribution layer and gate-drain edge passivation;Micro and Nanostructures;2022-04
4. Influence of High-k Passivation Layer on Gate Field Plate AlGaN/GaN/AlGaN Double Heterojunction HEMT;Silicon;2022-03-07
5. Relative effectiveness of high-k passivation and gate-connected field plate techniques in enhancing GaN HEMT breakdown;Microelectronics Reliability;2020-07
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