Influence of High-k Passivation Layer on Gate Field Plate AlGaN/GaN/AlGaN Double Heterojunction HEMT
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01746-z.pdf
Reference37 articles.
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2. Fletcher ASA, Nirmal D, Arivazhagan L, Murugapandiyan P et al (2022) A 28-GHz low-loss AlGaN/GaN HEMT for TX/RX switches in 5G base stations. J Electron Mater. https://doi.org/10.1007/s11664-021-09367-9
3. Natarajan R, Parthasarathy E (2021) Breakdown voltage enhancement of Al0.1Ga0.9N channel HEMT with recessed floating field plate. Silicon. https://doi.org/10.1007/s12633-021-01322-x
4. Shrestha NM, Li Y, Chen C-H, Sanyal I, Tarng J-H, Chyi J-I, Samukawa S (2020) Design and simulation of high performance lattice matched double barrier normally off AlInGaN/GaN HEMTs. IEEE J Electron Devices Soc 8:873–878. https://doi.org/10.1109/JEDS.2020.3014252
5. Moon J-S, Wong J, Grabar B, Antcliffe M, Chen P, Arkun E, Khalaf I, Corrion A, Chappell J, Venkatesan N, Fay P (2020) 360 GHz fMAX graded-channel AlGaN/GaN HEMTs for mmW low-noise applications. IEEE Electron Device Lett 41:1173–1176. https://doi.org/10.1109/LED.2020.3005337
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