Increasing the breakdown voltage in gate – Field plate High Electron Mobility Transistor using a surface field distribution layer and gate-drain edge passivation-Reference-Cited by-同舟云学术

Increasing the breakdown voltage in gate – Field plate High Electron Mobility Transistor using a surface field distribution layer and gate-drain edge passivation

Published:2022-04 Issue: Volume:164 Page:107164
ISSN:2773-0123
Container-title:Micro and Nanostructures
language:en
Short-container-title:Micro and Nanostructures

Author:

Suresh V.,Siddhartthan S.K.,Varadharajaperumal Muthubalan^ORCID

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Biomaterials

Reference20 articles.

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3. Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate;Karmalkar;IEEE Trans. Electron. Dev.,2001

4. Au-free AlGaN/GaN MIS-HEMTs with embedded current sensing structure for power switching applications;Sun;IEEE Trans. Electron. Dev.,2017

5. Novel drain-connected field plate GaN HEMT designs for improved VBD–RON tradeoff and RF PA performance;Soni;IEEE Trans. Electron. Dev.,2020

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1. Optimization of 150 nm GaN HEMT for Ku-band applications using field plate engineering;Micro and Nanostructures;2024-04

2. Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems;ECS Journal of Solid State Science and Technology;2023-03-01