High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS<SUB>2</SUB>-Reference-Cited by-同舟云学术

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High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS₂

Published:2016-04-01 Issue:2 Volume:6 Page:198-204
ISSN:2158-5849
Container-title:Materials Express
language:en
Short-container-title:Mat Express

Author:

Wu Dianzhong,Zhang Zhiyong,Lv Danhui,Yin Guoli,Peng Zhijian,Jin Chuanhong

Publisher

American Scientific Publishers

Subject

General Materials Science

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Few-Layer MoS₂ on a SiO₂/Si Wafer through Sulfurization Chemical Vapor Deposition with a Vaporization-Shadowing Effect;ACS Applied Nano Materials;2024-08-26

2. Optimizing Ultrathin 2D Transistors for Monolithic 3D Integration: A Study on Directly Grown Nanocrystalline Interconnects and Buried Contacts;Advanced Materials;2024-04-22

3. High-Performance CVD MoS₂ Transistors with Self-Aligned Top-Gate and Bi Contact;2021 IEEE International Electron Devices Meeting (IEDM);2021-12-11

4. Insights into optical detection and three-dimensional characterization of monolayer molybdenum disulfide thin films based on machine learning;Applied Surface Science;2021-11

5. A strategic review of recent progress, prospects and challenges of MoS2-based photodetectors;Journal of Physics D: Applied Physics;2021-10-22

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