High-Performance CVD MoS<sub>2</sub> Transistors with Self-Aligned Top-Gate and Bi Contact-Reference-Cited by-同舟云学术

High-Performance CVD MoS₂ Transistors with Self-Aligned Top-Gate and Bi Contact

Published:2021-12-11 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Li Weisheng¹,Fan Dongxu¹,Shao Liangwei¹,Huang Futao²,Liang Lei¹,Li Taotao¹,Xu Yifei¹,Tu Xuecou¹,Wang Peng²,Yu Zhihao¹,Shi Yi¹,Qiu Hao¹,Wang Xinran¹

Affiliation:

1. School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University,National Laboratory of Solid State Microstructures,Nanjing,China,210093

2. College of Engineering and Applied Sciences, Nanjing University,Jiangsu Key Laboratory of Artificial Functional Materials,Nanjing,China,210093

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720595.pdf?arnumber=9720595

Reference18 articles.

1. Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime

2. Structural absorption by barbule microstructures of super black bird of paradise feathers

3. High Current Density in Monolayer MoS2 Doped by AlOx

4. Graphene‐Contacted Ultrashort Channel Monolayer MoS 2 Transistors

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The rise of semi-metal electronics;Nature Reviews Electrical Engineering;2024-08-01

2. Nanogap Channel and Reconfigurable Split-Gate Logic Achieved via Nano Scissoring on Ambipolar MoTe₂ Transistors;ACS Applied Electronic Materials;2024-07-01

3. Contact engineering for temperature stability improvement of Bi-contacted MoS2 field effect transistors;Science China Information Sciences;2024-05-15

4. Two-Dimensional Semiconductors and Transistors for Future Integrated Circuits;ACS Nano;2024-03-08

5. The Device-Circuit Co-design Perspective on Phase-Transition and Hybrid Phase-Transition (Hyper-) FETs, Phase-FETs, and MOSFET;Springer Tracts in Electrical and Electronics Engineering;2024