Effect of impurities on the Raman scattering of 6H-SiC crystals
Author:
Affiliation:
1. Xi'an University of Technology, PR, China
2. Xi'an Polytechnic University, PR, China
Publisher
FapUNIFESP (SciELO)
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
http://www.scielo.br/pdf/mr/v15n6/aop_1075-11.pdf
Reference19 articles.
1. A technique for diameter enlargement in SiC crystal growth;Lin S;International Journal of Materials Research,2010
2. Identification and control of SiC polytypes in PVT method;Lin S;Journal of Materials Science Materials in Electronics,2010
3. The correlation of the results of capacitance mapping and of sheet resistance mapping in semi-insulating 6H-SiC;Lin S;Journal of Alloys and Compounds,2010
4. Three-dimensional observation of defects in nitrogen-doped 6H-SiC crystals using a laser scanning confocal microscope;Lin S;Journal of Materials Science,2012
5. Formation and evolution of micropipes in SiC crystals;Lin S;CrystEngComm,2012
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