The correlation of the results of capacitance mapping and of sheet resistance mapping in semi-insulating 6H–SiC
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference11 articles.
1. Nondestructive three-dimensional observation of defects in semi-insulating 6H-SiC single-crystal wafers using a scanning laser microscope (SLM) and infrared light-scattering tomography (IR-LST)
2. Controlled-growth and characterization of 3C-SiC and 6H-SiC films on C-plane sapphire substrates by LPCVD
3. Influence of particle size distribution on oxidation behavior of SiC powder
4. Thermal reaction of SiC films with Mo, Re and Mo–Re alloy
5. Characterization of a stoichiometric SiC film deposited on a thermally oxidized Si substrate
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1. Investigations on the Effects of 150 MeV Ag Ion Irradiations on 4H–SiC;Springer Proceedings in Physics;2019
2. Effect of impurities on the Raman scattering of 6H-SiC crystals;Materials Research;2012-09-04
3. Formation and suppression of misoriented grains in 6H-SiC crystals;CrystEngComm;2011
4. A technique for diameter enlargement in SiC crystal growth;International Journal of Materials Research;2010-12-01
5. Room-temperature ferromagnetism of vanadium-doped 6H–SiC;Chemical Physics Letters;2010-08
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