Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing-Reference-Cited by-同舟云学术

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Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing

Published:2018-09-04 Issue:20 Volume:33 Page:3355-3361
ISSN:0884-2914
Container-title:Journal of Materials Research
language:en
Short-container-title:J. Mater. Res.

Author:

Yamazaki Yuichi,Chiba Yoji,Makino Takahiro,Sato Shin-Ichiro,Yamada Naoto,Satoh Takahiro,Hijikata Yasuto,Kojima Kazutoshi,Lee Sang-Yun,Ohshima Takeshi

Abstract

Abstract

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference29 articles.

1. Diamond based light-emitting diode for visible single-photon emission at room temperature

2. Tunable light emission from nitrogen-vacancy centers in single crystal diamond PIN diodes

3. Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide

4. Optical thermometry based on level anticrossing in silicon carbide

5. Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide

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1. Optically detected magnetic resonance of silicon vacancies in 4H-SiC at elevated temperatures toward magnetic sensing under harsh environments;Journal of Applied Physics;2023-04-17

2. Toward real application of quantum sensing and metrology;Frontiers in Quantum Science and Technology;2022-09-26

3. Electrical detection of T_V2a-type silicon vacancy spin defect in 4H-SiC MOSFETs;Applied Physics Letters;2022-02-07

4. Influences of hydrogen ion irradiation on NcVsi − formation in 4H-silicon carbide;Applied Physics Express;2021-01-28

5. Thermometric quantum sensor using excited state of silicon vacancy centers in 4H-SiC devices;Applied Physics Letters;2021-01-25

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