Influences of hydrogen ion irradiation on NcVsi − formation in 4H-silicon carbide

Abstract

Abstract Nitrogen-vacancy (NCVSi −) center in 4H-SiC is spin defect with near-infrared luminescence at room temperature and a promising candidate for quantum technologies. This paper reports on NCVSi − center formation in N-doped 4H-SiCs by hydrogen ion irradiation and subsequent thermal annealing. It is revealed photoluminescence for NCVSi − centers suddenly appears above the fluence of 5.0 × 1015 cm−2 when annealed at 1000 °C. Appearance of a threshold fluence for their formation and/or activation has not been observed for other energetic particle irradiations. The possible mechanism is discussed based on the kinetics of hydrogen-related complexes and the majority carrier depletion caused by irradiation induced damage.