Author:
Brotherton S. D.,Ayres J. R.,Clegg J. B.,Goldsmith B. J.
Abstract
ABSTRACTAn examination of Si+ pre-amorphised p+n structures as a function of Si+ implantation energy and solid phase epitaxial regrowth temperature has revealed three different classes of defect all of which may influence the characteristics of the junction. They are point defects responsible for high concentrations of deep level donors, and interstitial dislocation loops both causing leakage current degradation, and excess silicon interstitials leading to enhanced junction movement.
Publisher
Springer Science and Business Media LLC
Cited by
4 articles.
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