Analysis of Structural Transformations in High Fluence Nitrogen Ion Implanted Aluminium

Abstract

ABSTRACTThe structural analysis of Al layers on Si obtained by sputtering at different conditions and implanted with nitrogen (with doses of 2.5×10'17 and 5×1017 N2+ ions/cm2, energy 150 keV, room temperature) is performed by SRP, SIMS and TEM measurements. The correlation between these measurements shows the formation of AIN crystalline precipitates already at the substoichiometric dose. SRP and TEM reveal the presence of a buried layer with resistivity higher than the Al matrix, with a high concentration of AIN precipitates. The morphology of this layer is affected by surface roughness. For the higher dose, a buried continuous AIN polycrystalline dielectric layer is formed. Moreover, the SIMS measurements suggest a gettering effect of Si in the buried layer.