Microstructure of Si Films Deposited on Si(100) Surfaces by Remote Plasma-Enhanced Chemicalvapor Deposition, Rpecvd: Dependence on Process Pressure and Substrate Temperature

Abstract

ABSTRACTThe microstructure of Si thin films, deposited on in-situ cleaned Si(100) surfaces by remote plasma-enhanced chemical-vapor deposition (RPECVD), is dependent on the process pressure, substrate temperature and H2 flow rate. Surface characterization by on-line low energy electron diffraction, LEED, has been used to detect changes in the character of the deposited films which can either be amorphous, microcrystalline or crystalline, hereafter designated as a-Si, Sμc-Si, and c-Si, respectively. We have used these results to generate phase diagrams for the Si microstructure as a function of the process pressure and substrate temperature, including the flow rate of H2 as an additional deposition parameter.