Heteroepitaxial growth of Si on GaP and GaAs surfaces by remote, plasma enhanced chemical vapor deposition
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.579077
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Nanoscale metal-InGaAs contacts with ultra-low specific contact resistivity: Improved interfacial quality and extraction methodology;Journal of Applied Physics;2018-01-14
2. In situ cleaning of InGaAs surfaces prior to low contact resistance metallization;Microelectronic Engineering;2016-04
3. Erratum: “Low-temperature (<450 °C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering” [J. Vac. Sci. Technol. A 15, 1035 (1997)];Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-01
4. Ion–surface interactions in low temperature silicon epitaxy by remote plasma enhanced chemical–vapor deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1996-11
5. Real-Time Monitoring of Epitaxial Processes by Parallel-Polarized Reflectance Spectroscopy;MRS Bulletin;1995-05
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