Abstract
ABSTRACTDetailed relationship between the fractal dimension and the excess noise frequency exponent has been considered for metal-silicon interfacial structures during the phase transformation to the initial compound phase formation in thin film systems. In the estimation of the fractal dimension of the thin film structures, a technique has been used, which basically employs a digital image processing of highly magnified micrographs of the structures. Previously measured frequency exponent data of the excess noise power spectral density for the same thin film systems has been interpreted by introducing a multiplication process which combines the fractal dimension variations and cluster interactions of the interfaces. It has been assumed that the fractal dimension plays a role as a multiplication factor in the multiplication process.
Publisher
Springer Science and Business Media LLC
Cited by
2 articles.
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