Abstract
AbstractTitanium silicides were prepared by coevaporation of Ti and Si on Si substrates at intermediate substrate temperatures followed by high temperature annealing. Depending on the deposition conditions, transmission electron diffraction analyses revealed two different halo patterns from the as-deposited samples. Variations in the deposition conditions included substrate temperature, deposition rate, and film thickness. Radial distribution functions were calculated to estimate the short range ordering of the amorphous phases. The interatomic distances of all the titanium silicide compounds were also calculated in order to compare them with the atomic ordering of amorphous phases. Phase transition from these amorphous phases to the first crystalline silicide is discussed in terms of kinetic variations as well as the atomic ordering.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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