Author:
Hudgens S.J.,Johncock A.G.
Abstract
AbstractA new multilayer amorphous silicon alloy photoreceptor has been deposited at rates exceeding 36 µm/hr. using 2.45 GHz microwave glow discharge. The device whose structure is Al/a-Si:H:F (B-300)/a-Si:H:F (B-10)/a-Si:H:F:C is deposited in a powderless plasma deposition process which exhibits gas utilization efficiency approaching 100%. The xerographic performance of a 28µm device is: Vsat∼1100 V for a +7 KV corona; dark half decay time ≃5 sec; and photosensitivity ∼0.3 µJ/cm2 at λ = 650 nm. Stable, high quality xerographic images are obtained with these photoreceptors.
Publisher
Springer Science and Business Media LLC
Reference16 articles.
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3. 12.This deposition technology and materials are protected an issued U.S. Patent, Ovshinsky et al. number 4,504,518.
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