Low-Temperature Sputter-Deposition of Poly-Crystal Silicon Thin-Films

Abstract

AbstractPoly-Si films were deposited at temperatures as low as 325°C by a newly proposed method. In the proposed method, both Ni-enhanced crystallization effects and vapor-phase deposition were utilized to reduce the deposition temperature. The X-ray diffraction measurement shows that the films were (110)-oriented at temperatures among 325°C to 419°C. When the partial pressure of hydrogen gas in the deposition chamber exceeds 0.1%, crystallization was disrupted. The characteristics of TFTs and pn junction diodes showed its potential applicability to AMLCDs and sollar cells.