Author:
Arnold G. W.,Picraux S. T.,Myers D. R.,Doyle B. L.,Peercy P. S.,Biefeld R. M.,Dawson L. R.
Abstract
ABSTRACTCantilever-beam measurements of ion-implantation induced stress in (InGa)As/GaAs, Ga(AsP)/GaP, and Ga(AsP)/GaAs strained layer superlattices (SLSs), grown either by molecular-beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD), have shown that a mechanism for precipitous stress-relief can be operative, f or room-temperature damage -energy deposition values above - 2 × 10 keV/cm. This phenomenon is correlated with the initial residual compressive stress on the composite structure and is determined by the differences in lattice parameter between the substrate and the buffer alloy-layer.
Publisher
Springer Science and Business Media LLC
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献