Structural integrity of ion‐implanted In0.2Ga0.8As/GaAs strained‐layer superlattice
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95228
Reference6 articles.
1. A GaAsxP1−x/GaP strained‐layer superlattice
2. Continuous 300‐K laser operation of strained superlattices
3. Compaction of ion‐implanted fused silica
4. The effects of ion‐implantation damage on the first‐order Raman spectra of GaP
5. A Monte Carlo computer program for the transport of energetic ions in amorphous targets
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1. Mapping of strain in multilayer GaAs/AlAs superlattices from HRTEM micrographs;Materials Letters;2021-02
2. Index‐guided operation in narrow stripe InGaAs‐GaAs strained‐layer quantum well heterostructure lasers by MeV oxygen implantation;Applied Physics Letters;1991-05-13
3. Effects of ion irradiation on the optical properties of ZnSeZnS strained-layer superlattices;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-02
4. Optical properties and Stokes shifts in lamp‐annealed InGaAs/GaAs strained layer superlattice;Journal of Applied Physics;1988-04-15
5. Ion Implantation Processing of III-V Strained-Layer Semiconductors;MRS Proceedings;1988
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