Abstract
ABSTRACTIon implantation has had a strong impact on the development of III-V strained-layer semiconductor (SLS) materials and device technologies. Implantation studies have helped delineate the present understanding of strained-layer stability and metastability limits. Resulting ion beam technologies have led to improvements in a variety of SLS discrete devices, including optoelectronic emitters, photodetectors, and field-effect transistors. Both SLS stability criteria and implanted SLS devices are reviewed with respect to future applications in optoelectronics.
Publisher
Springer Science and Business Media LLC
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