The Influence of Capping Layer Type on Cobalt Salicide Formation in Films and Narrow Lines-Reference-Cited by-同舟云学术

The Influence of Capping Layer Type on Cobalt Salicide Formation in Films and Narrow Lines

Published:1998 Issue: Volume:514 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Besser P. R.,Lauwers A.,Roelandts N.,Maex K.,Blum W.,Alvis R.,Stucchi M.,Potter M. De

Abstract

ABSTRACTThe effect of capping layer (Ti vs TiN) on CoSi formation and CoSi2 sheet resistance has been investigated. Resistance measurements and XTEM analysis have been used to show that the Ti cap lowers the activation energy for CoSi formation by gettering the O2 from the RTA (rapid thermal anneal) ambient and eliminating the formation of SiO2 between the growing CoSi and the Co. The sheet resistance of cobalt silicide formed from Co/Ti and Co/TiN bilayers on poly- Si lines was measured as a function of linewidth and RTA temperature. With a Ti cap, the sheet resistance is low and independent of temperature, and the RTA process window is large.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference14 articles.

1. Interactions in the Co/Si thin‐film system. I. Kinetics

2. Formation of thin films of CoSi2: Nucleation and diffusion mechanisms

3. 9. Setton M. , Ph. D. Thesis, University of Pennsylvania (1990).

4. Transmission Electron Microscopy Observation ofCoSixSpikes in Si Substrates during Co-silicidation Process

5. Increased uniformity and thermal stability of CoSi2 thin films by Ti capping

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