Author:
Ridgway M. C.,Elliman R. G.,Hauser N.,Baribeau J. -M.,Jackman T. E.
Abstract
ABSTRACTThe thermally-induced Co/SixGe1-x reaction has been studied for a series of isochronal (25–600°C/20 min) and isothermal (600°C/u-240 min) annealing sequences using Rutherford backscattering spectrometry, transmission electron microscopy and sheet resistance measurements. Annealing at 600°C yields a reacted surface layer comprised of Si-rich CoSixGe1-x, Ge-rich SiyGe1-y and possibly CoSi2, with the two former constituents exhibiting a degree of epitaxial alignment with the substrate. The formation of Co/SiSixGe1-x alloys is discussed in terms of the ternary phase diagram.
Publisher
Springer Science and Business Media LLC
Cited by
30 articles.
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