Author:
Dmg P. J.,Lanford W. A.,Hymes S.,Murarka S. P.
Abstract
ABSTRACTIon implantation of boron and aluminium is used to passivate copper surfaces. Such a process modifies the copper only near its surface without affecting copper's desirable bulk properties. The present experiments show that implant doses as low as 1015 ions/cm2 of either boron or aluminium can reduce the oxidization rate by one order of magnitude or more compared to non-implanted samples.
Publisher
Springer Science and Business Media LLC
Cited by
10 articles.
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