Performance and Reliability of SiC Power MOSFETs-Reference-Cited by-同舟云学术

Performance and Reliability of SiC Power MOSFETs

Published:2016-01 Issue:2 Volume:1 Page:81-89
ISSN:2059-8521
Container-title:MRS Advances
language:en
Short-container-title:MRS Advances

Author:

Lichtenwalner Daniel J.,Hull Brett,Pala Vipindas,Van Brunt Edward,Ryu Sei-Hyung,Sumakeris Joe J.,O’Loughlin Michael J.,Burk Albert A.,Allen Scott T.,Palmour John W.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1557/adv.2015.57.pdf

Reference16 articles.

1. B.J. Baliga, Fundamentals of Power Semiconductor Devices, Springer Science, New York (2008).

2. T. Kimoto and J.A. Cooper, Fundamentals of Silicon Carbide Technology, IEEE Press, John Wiley & Sons, Singapore (2014).

3. H. Iwata and K.M. Itoh, J. Appl. Phys. 89(11), 6228–6234 (2001).

4. J.J. Sumakeris, J.R. Jenny, and A.R. Powell, MRS Bulletin 30, 280–286 (2005).

5. A.R. Powell, J.J. Sumakeris, Y. Khlebnikov, M. Paisley, R. Leonard, M. O’Loughlin, E. Deyneka, S. Gangwal, J. Ambati, V. Tsvetkov, J. Seaman, A. McClure, C. Horton, O. Kramarenko, V. Sakhalkar, J. Guo, M. Dudley, and E. Balkas, Inter. Conf. on SiC and Related Materials (ICSCRM) (Oct. 5, 2015).

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