Author:
Liu Qiang,Wang Qian,Liu Hao,Fei Chenxi,Li Shiyan,Huang Runhua,Bai Song
Abstract
Abstract
A 4H-SiC power MOSFET with specific on-resistance of 3.4 mΩ·cm2 and breakdown voltage exceeding 1.5 kV is designed and fabricated. Numerical simulations are carried out to optimize the electric field strength in gate oxide and at the surface of the semiconductor material in the edge termination region. Additional n-type implantation in JFET region is implemented to reduce the specific on-resistance. The typical leakage current is less than 1 μA at V
DS = 1.4 kV. Drain–source current reaches 50 A at V
DS = 0.75 V and V
GS = 20 V corresponding to an on-resistance of 15 mΩ. The typical gate threshold voltage is 2.6 V.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Material science and device physics in SiC technology for high-voltage power devices;Kimoto;Jpn J Appl Phys,2015
2. Performance and reliability of SiC power MOSFETs;Lichtenwalner;MRS Adv,2016
3. SiC power MOSFETs performance, robustness and technology maturity;Castellazzi;Microelectron Reliab,2016
4. Comparative study of temperature-dependent characteristics for SiC MOSFETs;Jiang;China International Forum on Solid State Lighting,2016
5. A 1200 V/100 A all-SiC power module for boost converter of EV/HEV’s motor driver application;Zhou;China International Forum on Solid State Lighting,2016
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