Gettering & Precipitation Phenomena in Semiconductors-Reference-Cited by-同舟云学术

Gettering & Precipitation Phenomena in Semiconductors

Published:1984 Issue: Volume:36 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Sadana D. K.

Abstract

ABSTRACTImpurity gettering at defects/damage in Si is discussed. Details of intrinsic and extrinsic gettering in Si are presented. The utility of gettering is demonstrated by comparing the results from gettered and non-gettered test devices.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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