First-principles calculation of interaction between interstitial O and As dopant in heavily As-doped Si-Reference-Cited by-同舟云学术

First-principles calculation of interaction between interstitial O and As dopant in heavily As-doped Si

Published:2007-01-15 Issue:2 Volume:101 Page:026104
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lu Guang-Hong,Wang Q.,Liu Feng

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2423231

Reference17 articles.

1. D. E. Hill, Defects in Silicon, edited by W. M. Bullis and L. C. Kimerling (Electrochemical Society, Pennington, NJ, 1983), p. 433.

2. Increased oxygen precipitation in CZ silicon wafers covered by polysilicon

3. R. A. Craven, in Semiconductor Silicon, edited by H. R. Huff, R. J. Kriegler, and Y. Takeishi (The Electrochemical Society, Pennington, NJ, 1991), Proceeding 18–5, p. 254.

4. Gettering & Precipitation Phenomena in Semiconductors

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