Increased oxygen precipitation in CZ silicon wafers covered by polysilicon-Reference-Cited by-同舟云学术

Increased oxygen precipitation in CZ silicon wafers covered by polysilicon

Published:1984-09 Issue:5 Volume:13 Page:763-778
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Arst M. C.,de Groot J. G.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02657925.pdf

Reference14 articles.

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3. K. Templehoff, B. Hann and R. Gleichman, “Oxygen Precipitation in Silicon Between 600°C and 800°C”, Semiconductor Silicon, Edited by H. R. Huff and R. J. Kriegler, 244 (1981).

4. N. Inoue, K. Osaka and K. Wada, Electrochem. Soc. Meeting Abs. 79-2,1358 (1979).

5. S. M. Hu, J. Appl. Phys.52, 3974 (1981).

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