Author:
Wang Q.,Daggubati Manmohan,Paravi Hossein,Yu Rong,Zhang Xiao Feng
Abstract
AbstractThe precipitation of interstitial oxygen (Oi) in heavily arsenic doped Czochralski (CZ) silicon wafers (As-wafer) has been studied for both polysilicon and damaged back surfaces. After annealed at 1200°C for 45 minutes and 950°C for 15hrs sequentially, the As-wafers with polysilicon show no Oi precipitation in the bulk while polyhedral Oi precipitates are observed at the interface between polysilicon and the silicon substrate. They exhibit a habit plane of {100}. The lack of the Oi precipitation in the bulk may reduce the total gettering efficiency of the polysilicon layer on the As-wafer. The same annealing led to rod-like SiOx precipitates in the wafers with damaged back surface. These precipitates extended about 1um into the bulk and had a habit plane of {111}. This morphology has high interfacial energy and is only possible when strain relief is dominant. The Oi outdiffusion has been observed to be same for both backside surface conditions and is only determined by annealing process.
Publisher
Springer Science and Business Media LLC
Reference16 articles.
1. Gettering of oxygen in Si wafers damaged by ion implantation and mechanical abrasion
2. Gettering of mobile oxygen and defect stability within back‐surface damage regions in Si
3. 13 Yu R. , Zhang X.F. , Wang Q. , Daggubati M. , and Paravi H. , Symp. of MSA, Hawaii, 2005, submitted.
4. 12 Wang Q. , Daggubati M. , Yu Rong , and Zhang X.F. , To be submitted.
5. Vacancy generation resulting from electrical deactivation of arsenic
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